| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTD10N50F1S | 10A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 33 K |
| HGTP10N50F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 34 K |
| IXFH12N50F | 500V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 303 K |
| IXFK44N50F | 500V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 99 K |
| IXFK55N50F | 500V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 99 K |
| IXFN55N50F | 500V HiPerRF power MOSFET | distributor | - | 4 | -55°C | 150°C | 106 K |
| IXFR55N50F | 500V HiPerRF power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 132 K |
| IXFT12N50F | 500V HiPerRF power MOSFET | distributor | - | 3 | -55°C | 150°C | 303 K |
| IXFX44N50F | 500V HiPerRF power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 99 K |
| IXFX55N50F | 500V HiPerRF power MOSFET | distributor | ISOPLUS247 | 3 | -55°C | 150°C | 99 K |
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