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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2N5210350mW NPN silicon AF low noise small signal transistordistributor-3-55°C150°C146 K
2N5210Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW.distributor-30°C150°C45 K
IRF5N5210HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31AInternational-Rectifier-3-55°C150°C118 K
MN5210H/BCH12-bit military A/D converterdistributorDIP24-55°C125°C1 M
MUN5211DW1T150 V, dual bias resistor transistordistributor-6-55°C150°C199 K
MUN5212DW1T150 V, dual bias resistor transistordistributor-6-55°C150°C199 K
MUN5213DW1T150 V, dual bias resistor transistordistributor-6-55°C150°C199 K
MUN5214DW1T150 V, dual bias resistor transistordistributor-6-55°C150°C199 K
MUN5215DW1T150 V, dual bias resistor transistordistributor-6-55°C150°C199 K
MUN5216DW1T150 V, dual bias resistor transistordistributor-6-55°C150°C199 K
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