Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
1N5402 | 200V; 3.0A rectifier; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 175°C | 62 K |
1N5402 | 200 V, 3 A, plastic silicon rectifier | distributor | DO | 2 | -65°C | 175°C | 126 K |
1N5402 | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
1N5402 | 200 V, 3.0 A silicon rectifier | distributor | DO | 2 | -65°C | 125°C | 121 K |
1N5402 | 200 V, 3 A, high current plastic silicon rectifier | distributor | - | 2 | -55°C | 150°C | 155 K |
1N5402G | 200V; 3.0A glass passivated rectifier; diffused junction; high current capability and low forward voltage drop | distributor | - | 2 | -65°C | 150°C | 59 K |
1N5402G | 3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. | distributor | - | 2 | -65°C | 150°C | 128 K |
1N5402GP | 200 V, 3 A glass passivated junction rectifier | distributor | - | 2 | -65°C | 175°C | 39 K |
1N5402GP | 3.0A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 78 K |
IN5402 | 3.0 A, silicon rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. | distributor | - | 2 | -65°C | 125°C | 139 K |
[1] [2] [3] [4] 5 |
---|