Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5550 | Glass Passivated Junction Rectifier | General-Semiconductor | G4 | - | - | - | 53 K |
1N5550 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_(WT) | - | - | - | 78 K |
1N5550 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | E | - | - | - | 46 K |
1N5550US | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | B_MELF(WT) | - | - | - | 78 K |
2N5550 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 28 K |
2N5550 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 147 K |
2N5550 | NPN high-voltage transistors | Philips-Semiconductors | SOT54 | - | - | - | 43 K |
2N5550RLRA | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 188 K |
2N5550RLRP | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 188 K |
2N5550S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 152 K |
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