| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N6036 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| 2N6039 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 87 K |
| 2N6059 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 64 K |
| HGTG24N60D1D | 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode | Intersil-Corporation | - | - | - | - | 35 K |
| MTP3N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 200 K |
| STB3N60-1 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
| STGB10N60L | N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 88 K |
| STGP10N60L | N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 88 K |
| STP2N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 199 K |
| STP6N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 151 K |
| [1] [2] 3 [4] [5] [6] [7] [8] [9] [10] |
|---|
