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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N626360V; schottky barrier switching diode. Guard ring construction for transient protectiondistributor-3-55°C125°C49 K
1N6263W60V; surface mount schottky barrier switching diode. Guard ring construction for transient protectiondistributor-2-65°C125°C71 K
1N6264GaAs INFRARED EMITTING DIODEFairchild-Semiconductor----120 K
1N6267Working peak reverse voltage:5.50 V, 1500 W transient voltage suppressordistributor-2-65°C175°C27 K
1N6267AWorking peak reverse voltage:5.80 V, 1500 W transient voltage suppressordistributor-2-65°C175°C27 K
1N6268Working peak reverse voltage:6.05 V, 1500 W transient voltage suppressordistributor-2-65°C175°C27 K
1N6268AWorking peak reverse voltage:6.40 V, 1500 W transient voltage suppressordistributor-2-65°C175°C27 K
1N6269Working peak reverse voltage:6.63 V, 1500 W transient voltage suppressordistributor-2-65°C175°C27 K
1N6269AWorking peak reverse voltage:7.02 V, 1500 W transient voltage suppressordistributor-2-65°C175°C27 K
2N626180V Vce, 4A Ic, 20MHz NPN bipolar transistorSemelab-Plc-TO66---18 K
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