| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MGP21N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 127 K |
| MGP4N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 124 K |
| MGP7N80E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 122 K |
| MTB4N80E1 | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 160 K |
| MTD1N80E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| MTP1N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
| MTP4N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| MTW7N80E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 220 K |
| MTY16N80E | TMOS E-FET power field effect transistor | Motorola | - | 3 | -55°C | 150°C | 239 K |
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