| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NE5205AN | Wide-band high-frequency amplifier | Philips-Semiconductors | NE | - | - | - | 114 K |
| NE5209D | Wideband variable gain amplifier | Philips-Semiconductors | DJ | - | - | - | 202 K |
| NE5209N | Wideband variable gain amplifier | Philips-Semiconductors | NJ | - | - | - | 202 K |
| NE5219D | Wideband variable gain amplifier | Philips-Semiconductors | DJ | - | - | - | 236 K |
| NE5219N | Wideband variable gain amplifier | Philips-Semiconductors | NJ | - | - | - | 236 K |
| NE532D | Dual Operational Amplifier | Philips-Semiconductors | SOT96 | - | - | - | 122 K |
| NE532N | Dual Operational Amplifier | Philips-Semiconductors | SOT97 | - | - | - | 122 K |
| NE532NB | Dual Operational Amplifier | Philips-Semiconductors | SOT97 | - | - | - | 122 K |
| NE5532AD8 | Internally-compensated dual low noise operational amplifier | Philips-Semiconductors | SOT96 | - | - | - | 125 K |
| NE5532AN | Internally-compensated dual low noise operational amplifier | Philips-Semiconductors | SOT97 | - | - | - | 125 K |
| NE5532AN | Internally-compensated dual low noise operational amplifier | Philips-Semiconductors | SOT97 | - | - | - | 125 K |
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