Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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NTE21128 | Integrated circuit. NMOS, 128K (16K x 8) UV EPROM. | distributor | DIP | 28 | 0°C | 70°C | 37 K |
NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | distributor | DIP | 18 | 0°C | 70°C | 29 K |
NTE2114 | Integrated circuit. MOS, static 4K RAM, 300ns. | distributor | DIP | 18 | 0°C | 70°C | 29 K |
NTE21256 | 262, 144-bit dynamic random access memory (DRAM). | distributor | DIP | 16 | 0°C | 70°C | 42 K |
NTE22 | Silicon NPN transistor. AF PO, general purpose amplifier, driver. | distributor | - | 3 | 0°C | 135°C | 19 K |
NTE221 | MOSFET Dual gate, N-channel for VHF TV receivers applications. | distributor | - | 3 | -65°C | 175°C | 24 K |
NTE222 | Feild effect transistor. Dual gate N-cannel MOSFET. | distributor | - | 3 | -65°C | 175°C | 24 K |
NTE222 | Feild effect transistor. Dual gate N-cannel MOSFET. | distributor | - | 3 | -65°C | 175°C | 24 K |
NTE226 | Germanium PNP transistor. Audio power amp. | distributor | TO66 | 2 | 0°C | 85°C | 17 K |
NTE227 | Silicon NPN transistor. High voltage amp, video output. | distributor | - | 3 | 0°C | 150°C | 20 K |
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