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NTE584

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NTE584Silicon schottky diode. Repetitive peak reverse voltage Vrrm = 20V. Forward continuous current If = 35mA.distributorDO352-65°C200°C15 K
NTE584Silicon schottky diode. Repetitive peak reverse voltage Vrrm = 20V. Forward continuous current If = 35mA.distributorDO352-65°C200°C15 K
NTE5840Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 500V.distributorDO42-65°C175°C18 K
NTE5841Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 500V.distributorDO42-65°C175°C18 K
NTE5843Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 600V.distributorDO42-65°C175°C18 K
NTE5844Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1200V. Average forward current 20A.distributorDO42-65°C175°C24 K
NTE5846Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 800V.distributorDO42-65°C175°C18 K
NTE5847Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 800V.distributorDO42-65°C175°C18 K
NTE5848Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 1000V.distributorDO42-65°C175°C18 K
NTE5849Stud mount standart recovery. Silicon rectifier, 3 Amp. Peak repetitive reverse voltage, DC blocking voltage 1000V.distributorDO42-65°C175°C18 K
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