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NTE585

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NTE585Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A.distributor-2-65°C125°C15 K
NTE5850Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5851Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5852Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5853Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5854Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5856Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5857Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5858Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5859Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.distributorDO42-65°C175°C24 K
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