| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE585 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 1.0A. | distributor | - | 2 | -65°C | 125°C | 15 K |
| NTE5850 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5851 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5852 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5853 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5854 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5856 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5857 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5858 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5859 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| 1 |
|---|
