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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NTE586Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 3.0A.distributor-2-65°C125°C15 K
NTE5860Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5862Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5863Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5864Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A.distributorDO42-40°C175°C15 K
NTE5865Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.distributorDO42-40°C175°C15 K
NTE5866Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5867Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5868Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.distributorDO42-65°C175°C24 K
NTE5869Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.distributorDO42-65°C175°C24 K
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