| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE586 | Silicon rectifier diode, schottky barrier, fast switching. Max reccurent peak reverse voltage 40V. Max average forward rectified current 3.0A. | distributor | - | 2 | -65°C | 125°C | 15 K |
| NTE5860 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5862 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5863 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5864 | Silicon power rectifier diode. Cathode to case. Peak reverse voltage 200V. Max forward current 30A. | distributor | DO4 | 2 | -40°C | 175°C | 15 K |
| NTE5865 | Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A. | distributor | DO4 | 2 | -40°C | 175°C | 15 K |
| NTE5866 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5867 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5868 | Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| NTE5869 | Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. | distributor | DO4 | 2 | -65°C | 175°C | 24 K |
| 1 |
|---|
