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NTE63

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
NTE63Silicon NPN transistor. High gain, low noise aplifier.distributor-4-65°C150°C22 K
NTE630Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 600V. Average rectifier forward current: 8A (per diode), 16A (total device).distributorTO2203-65°C175°C18 K
NTE6354Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400V.distributor-2-40°C180°C25 K
NTE6355Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 400V.distributor-2-40°C180°C25 K
NTE6356Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 600V.distributor-2-40°C180°C25 K
NTE6357Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 600V.distributor-2-40°C180°C25 K
NTE6358Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1000V.distributor-2-40°C180°C25 K
NTE6359Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 1000V.distributor-2-40°C180°C25 K
NTE6362Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1400V.distributor-2-40°C180°C25 K
NTE6364Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1600V.distributor-2-40°C180°C25 K
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