Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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STH18NB40FI | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 12.4 A Current Idm pulse 73.6 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 400 V Resistance Rds on 0.3 R | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
STP11NB40FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
STP5NB40FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 71 K |
STP7NB40FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 73 K |
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