| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LC32464P-80 | 256K (65536 words x 4 bit) DRAM fast page mode | SANYO-Electric-Co--Ltd- | DIP18 | 18 | 0°C | 70°C | 278 K |
| LC338128P-80 | 1 MEG (131072 words x 8 bit) pseudo-SRAM | SANYO-Electric-Co--Ltd- | DIP32 | 32 | 0°C | 70°C | 194 K |
| LC33832P-80 | 256K (32768word x 8bit) Pseudo-SRAM | SANYO-Electric-Co--Ltd- | DIP28 | 28 | 0°C | 70°C | 128 K |
| M32000D4BFP-80 | Single-chip 32-bit CMOS microcomputer. | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 100 | 0°C | 70°C | 448 K |
| M5M29FB800VP-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -40°C | 85°C | 151 K |
| M5M29FT800FP-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOP | 44 | -40°C | 85°C | 151 K |
| M5M29FT800VP-80 | CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -40°C | 85°C | 151 K |
| M5M29GB160BVP-80 | CMOS 3.3V-only block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 75°C | 229 K |
| M5M29GT160BVP-80 | 16777216-bit CMOS 3.3V-only, block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 85°C | 229 K |
| M5M29T160BVP-80 | CMOS 3.3V-only block erase flash memory | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 48 | -20°C | 75°C | 229 K |
| 1 [2] [3] |
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