| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP064 | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A | International-Rectifier | - | 3 | -55°C | 175°C | 171 K |
| IRFP064N | HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 110A | International-Rectifier | - | 3 | -55°C | 175°C | 107 K |
| IRFP064V | HEXFET power MOSFET. VDSS = 60V, RDS(on) = 5.5mOhm, ID = 130A | International-Rectifier | - | 3 | -55°C | 175°C | 210 K |
| P0640SA | 58 V, sidactor device | distributor | - | 2 | -40°C | 150°C | 1 M |
| P0640SB | 58 V, sidactor device | distributor | - | 2 | -40°C | 150°C | 1 M |
| P0640SC | 58 V, sidactor device | distributor | - | 2 | -40°C | 150°C | 1 M |
| P0640SCMC | 58 V, microcapacitance SC sidactor device | distributor | - | 2 | -40°C | 150°C | 1 M |
| QIP0640001 | 600V, 400A asymmetrical half bridge IGBT module | distributor | - | - | - | - | 25 K |
| XP06401 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
| XP06435 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
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