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P10n10 datasheet. Datasheets search system |
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Example: max232 |
Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTP10N10E | TMOS IV power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 237 K |
MTP10N10EL | Logic level TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
PHP10N10E | 100 V, power MOS transistor | Philips-Semiconductors | TO | 3 | - | - | 56 K |
PNP10N10E | PowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 11 A. | Philips-Semiconductors | TO220AB | 3 | 0°C | 175°C | 71 K |
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