| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ALP121AAX | Low-Temperature Polysilicon 1.5-inch TFT LCD Module | SANYO-Electric-Co--Ltd- | - | - | - | - | 680 K |
| ALP121AGX | Low-Temperature Polysilicon 1.5-inch TFT LCD Module | SANYO-Electric-Co--Ltd- | - | - | - | - | 661 K |
| ALP121AXX | Low-Temperature Polysilicon 1.5-inch TFT LCD Module | SANYO-Electric-Co--Ltd- | - | - | - | - | 642 K |
| BSP121 | 200 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 4 | - | - | 64 K |
| P121 | 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor | distributor | - | 8 | -65°C | 150°C | 32 K |
| TIP121 | 80 V, NPN plastic power transistor | distributor | - | 3 | -65°C | 150°C | 28 K |
| TIP121 | NPN Epitaxial Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 45 K |
| TIP121 | NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. | distributor | - | 3 | -65°C | 150°C | 47 K |
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