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P12N10

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IXGP12N1001000V IGBTdistributor-4-55°C150°C51 K
IXGP12N100A1000V IGBTdistributor-4-55°C150°C51 K
IXGP12N100AU11000V IGBTdistributor-4-55°C150°C116 K
IXGP12N100U11000V IGBTdistributor-4-55°C150°C116 K
MTP12N10ETMOS E-FET power field effect transistorMotorola-4-55°C170°C239 K
PHP12N10E100 V, power MOS transistorPhilips-SemiconductorsTO3--57 K
PHP12N10EPowerMOS transistorPhilips-SemiconductorsSOT78---72 K
PNP12N10EPowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A.Philips-SemiconductorsTO220AB30°C175°C72 K
PNP12N10EPowerMOS transistor. Drain-source voltage 100 V. Drain current(DC) 14 A.Philips-SemiconductorsTO220AB30°C175°C72 K
RFP12N1012.0A, 80V and 100V, 0.200 ohm, N-Channel Power MOSFET FN1386.2Intersil-Corporation----43 K
RFP12N10L12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFETIntersil-Corporation----38 K
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