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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
15KP130130V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressordistributor-2-55°C175°C164 K
15KP130A130V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressordistributor-2-55°C175°C164 K
3KP130A130 V, 1 mA, 3000 W, glass passivated junction transient voltage suppressordistributor-2-55°C175°C206 K
5KP130130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applicationsdistributor-2-55°C175°C647 K
5KP130A130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applicationsdistributor-2-55°C175°C647 K
BSP130N-channel enhancement mode vertical D-MOS transistor.Philips-SemiconductorsSOT22340°C150°C89 K
IRFP130N-channel MOSFET, 100V, 14ASamsung-Electronic-3-55°C150°C354 K
JPP130PD03AC/DC open frame. Output power 130 Watts. Output V1 +5.1V/12.0A. Output V2 +15V/4.8A.distributor---10°C60°C493 K
PHP130N03LTTrenchMOS transistor. Logic level FET.Philips-SemiconductorsSOT783-55°C175°C51 K
PHP130N03LTTrenchMOS transistor. Logic level FET.Philips-SemiconductorsTO220AB3-55°C175°C51 K
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