Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FP212 | NPN/PNP epitaxial planar silicon composite transistor, high-voltag driver application | SANYO-Electric-Co--Ltd- | 2097A | 7 | - | - | 162 K |
FP212D250-22 | Differential magnetoresistive sensor | Infineon-formely-Siemens | - | 3 | -40°C | 140°C | 222 K |
FP212L100-22 | Differential magnetoresistive sensor | Infineon-formely-Siemens | - | 3 | -40°C | 140°C | 217 K |
PHP212 | Dual P-channel enhancement mode MOS transistor | Philips-Semiconductors | SOT96 | - | - | - | 111 K |
TISP2125F3D | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | D | - | - | - | 600 K |
TISP2125F3DR | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | DR | - | - | - | 600 K |
TISP2125F3P | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | P | - | - | - | 600 K |
TISP2125F3SL | Symmetrical Overvoltage TISP for 3 Wire Battery Backed Ringer Protection | Power-Innovations | SL | - | - | - | 600 K |
TYP212 | SCR FOR OVERVOLTAGE PROTECTION | SGS-Thomson-Microelectronics | - | - | - | - | 67 K |
ZVP2120A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 83 K |
ZVP2120A | P-channel enhancement mode vertical DMOS FET | Zetex-Semiconductor | - | 3 | -55°C | 150°C | 83 K |
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