Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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5KP26A | GPP transient voltage suppressor(TVS) . 5000W peak power, 5.0W steady state. VBR=28.9V(min), VBR=31.9V(max) @IT=5.0mA. For bidirectional use C or CA suffix. | distributor | - | 2 | -55°C | 175°C | 970 K |
IRFP260N | HEXFET power MOSFET. VDSS = 200 V, RDS(on) = 0.04 Ohm, ID = 50 A | International-Rectifier | - | 3 | -55°C | 175°C | 122 K |
IRFP264 | HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 0.075 Ohm, ID = 38 A | International-Rectifier | - | 3 | -55°C | 150°C | 168 K |
IRFP264N | HEXFET power MOSFET. VDSS = 250 V, RDS(on) = 60 mOhm, ID = 44 A | International-Rectifier | - | 3 | -55°C | 175°C | 222 K |
OP268FPS | Plastic point source infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 38 K |
OP269A | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 278 K |
OP269B | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 278 K |
OP269C | GaAs plastic infrared emitting diode | distributor | - | 2 | -40°C | 100°C | 278 K |
RMWP26001 | 24-26.5 GHz power amplifier MMIC | distributor | - | - | -30°C | 85°C | 598 K |
TLP2631 | GaAs ired & photo-IC | Toshiba | - | 8 | -55°C | 125°C | 374 K |
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