| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFP2907 | HEXFET power MOSFET. VDSS = 75 V, RDS(on) = 4.5 mOhm, ID = 209 A | International-Rectifier | - | 3 | -55°C | 175°C | 115 K |
| KSP2907A | General purpose transistor, PNP, collector-emitter=60V, collector power dissipation=625 mW | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 35 K |
| PNP2907A | 60 V, complementary NPN/PNP signal surface mount transistor | distributor | SOT | 6 | -55°C | 150°C | 323 K |
| USP2907 | General purpose transistor. Vcbo = -60V, Vceo = -40V, Vebo = -5V, Ic = -600mA, Pc = 625mW | distributor | - | 3 | 0°C | 150°C | 47 K |
| USP2907A | General ourpose transistor. Vcbo = -60V, Vceo = -60V, Vebo = -5V, Ic = -600mA, Pc = 625mW. | distributor | - | 3 | 0°C | 150°C | 48 K |
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