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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
D2587P305Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 193.05 THz. Center wavelength 1552.93 nm. High optical power 20 mW, CWdistributorMetal/ceramic butter14-25°C70°C122 K
OP305SLNPN silicon photodarlingtondistributor---65°C125°C309 K
P3055LD25V; 12A N-channel logic level enhancement mode field effect transistordistributorSOP3-55°C150°C214 K
P3055LL25V; 6A N-channel logic level enhancement mode field effect transistordistributor-3-55°C150°C217 K
P3055LL25V; 12A N-channel logic level enhancement mode field effect transistordistributor-3-55°C150°C215 K
P3056LS25V; 12A N-channel logic level enhancement mode field effect transistordistributor-3-55°C150°C45 K
PHP3055E55 V, N-channel trenchMOS transistorPhilips-SemiconductorsSOT3-55°C175°C103 K
SIP30520 Watt, input voltage range:3-4V, output voltage 5V,(4A) non-isolated step-up DC/DC converterdistributorSIP110°C100°C134 K
TIP3055NPN, silicon power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 7Vcd, Ic = 15Adc, PD = 90W.distributor-3-65°C150°C47 K
VP305/63.3V; 410mA; satellite channel decoderdistributor-1000°C70°C652 K
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