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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FGP30N6S2600V, SMPS II Series N-Channel IGBTFairchild-Semiconductor----177 K
FGP30N6S2D600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM DiodeFairchild-Semiconductor----281 K
FGP30N6S2D600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM DiodeFairchild-Semiconductor----281 K
FQP30N0660V N-Channel MOSFETFairchild-Semiconductor----660 K
FQP30N06L60V LOGIC N-Channel MOSFETFairchild-Semiconductor----623 K
MTP30N06VLTMOS V power field effect transistorMotorola-4-55°C175°C207 K
PHP30NQ15T150 V, N-channel enhancement mode field-effect transistorPhilips-SemiconductorsSOT3-55°C175°C288 K
RFP30N06LE30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsFairchild-Semiconductor----392 K
RFP30N06LE30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----80 K
STP30NE06LN-CHANNEL 60V - 0.035 OHM - 30A - TO-220/TO-220FP STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----105 K
STP30NE06LFPN-CHANNEL 60V - 0.035 OHM - 30A - TO-220/TO-220FP STRIPFET POWER MOSFETSGS-Thomson-Microelectronics----105 K
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