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P30N06

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQP30N0660V N-Channel MOSFETFairchild-Semiconductor----660 K
FQP30N06L60V LOGIC N-Channel MOSFETFairchild-Semiconductor----623 K
MTP30N06VLTMOS V power field effect transistorMotorola-4-55°C175°C207 K
RFP30N06LE30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsFairchild-Semiconductor----392 K
RFP30N06LE30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----80 K
STP30N06N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----206 K
STP30N06FIN-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----206 K
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