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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FQP3N60600V N-Channel MOSFETFairchild-Semiconductor----569 K
HGTP3N60A4600V, SMPS Series N-Channel IGBTFairchild-Semiconductor----189 K
HGTP3N60A4D600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast DiodeFairchild-Semiconductor----113 K
PHP3N60EPowerMOS transistor. Avalanche energy rated.Philips-SemiconductorsTO220AB3-55°C150°C80 K
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