| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2587P475 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 194.75 THz. Center wavelength 1539.37 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| IRFP470 | 500V mega MOSFET | distributor | - | 3 | -55°C | 150°C | 47 K |
| IRFP4710 | HEXFET power MOSFET. VDSS = 100 V, RDS(on) = 0.014 Ohm, ID = 72 A | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
| KS88P4716 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | - | 42 | -40°C | 85°C | 180 K |
| KS88P4716 | 8-bit single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | - | 44 | -40°C | 85°C | 180 K |
| MZP4729A | 1 to 3 watt zener regulator diode | Motorola | - | 2 | -65°C | 200°C | 156 K |
| TC55RP4701ECB | Low dropout positive voltage rgulator. Output voltage 4.7V. Tolerance +-1%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP4701EMB | Low dropout positive voltage rgulator. Output voltage 4.7V. Tolerance +-1%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP4702ECB | Low dropout positive voltage rgulator. Output voltage 4.7V . Tolerance +-2%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC55RP4702EMB | Low dropout positive voltage regulator. Output voltage 4.7V. Tolerance +-2%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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