| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D2587P535 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 195.35 THz. Center wavelength 1534.64 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| KS57P5312 | Single-chip CMOS microcontroller. OTP version. | Samsung-Electronic | - | 32 | -40°C | 85°C | 283 K |
| OP535A | NPN silicon phototransistor | distributor | - | 2 | -40°C | 100°C | 303 K |
| OP535B | NPN silicon phototransistor | distributor | - | 2 | -40°C | 100°C | 303 K |
| OP535C | NPN silicon phototransistor | distributor | - | 2 | -40°C | 100°C | 303 K |
| OP538FA | NPN silicon photodarlington | distributor | - | 2 | -40°C | 100°C | 230 K |
| OP538FB | NPN silicon photodarlington | distributor | - | 2 | -40°C | 100°C | 230 K |
| OP538FC | NPN silicon photodarlington | distributor | - | 2 | -40°C | 100°C | 230 K |
| SMP5397 | N-Channel silicon junction field-effect transistor | distributor | SMD | 4 | - | - | 91 K |
| SMP5398 | N-Channel silicon junction field-effect transistor | distributor | SMD | 4 | - | - | 91 K |
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