Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BCP53-10 | PNP silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 42 K |
BCP53-10 | PNP silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 42 K |
BCP53-16 | PNP silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 42 K |
BCP53-16 | PNP silicon planar medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 42 K |
HM6P5331 | 2.7-3.6 V , 2GHz/500 MHz, dual frequency synthesizer | distributor | LGA | 24 | -40°C | 85°C | 195 K |
HM6P5331 | 2.7-3.6 V , 2GHz/500 MHz, dual frequency synthesizer | distributor | TSSOP | 20 | -40°C | 85°C | 195 K |
STUP530 | Working peak reverse voltage: 25.6 V, 1 mA, 400 W surface mount transient voltage suppressor | distributor | SMA | 2 | -55°C | 150°C | 28 K |
STUP533 | Working peak reverse voltage: 28.2 V, 1 mA, 400 W surface mount transient voltage suppressor | distributor | SMA | 2 | -55°C | 150°C | 28 K |
TP5335K1 | 350V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 434 K |
TP5335NW | 350V P-channel enhancement-mode vertical DMOS FET | distributor | - | 3 | -55°C | 150°C | 434 K |
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