| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQP55N06 | 60V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 659 K |
| MTP55N06Z | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 143 K |
| P55N02LD | 25V; 55A N-channel logic level enhancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 44 K |
| P55N02LS | 25V; 60A N-channel logic level enhancement mode field effect transistor | distributor | - | 3 | -55°C | 150°C | 45 K |
| PHP55N03LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT78 | - | - | - | 107 K |
| PHP55N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 109 K |
| PHP55N03T | TrenchMOS transistor Standard level FET | Philips-Semiconductors | SOT78 | - | - | - | 57 K |
| STP55NE06 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 120 K |
| STP55NE06L | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
| STP55NF03L | Power dissipation 80 W Transistor polarity N Channel Current Id cont. 55 A Current Idm pulse 220 A Voltage Vgs th max. 2.5 V Pitch lead 2.54 mm Voltage Vds max 30 V Resistance Rds on 0.013 R | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
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