| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CEP6060 | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 510 K |
| CEP6060L | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 516 K |
| CEP6060LR | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 534 K |
| CEP6060R | N-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 175°C | 527 K |
| CP606 | Single-phase silicon bridge - P.C. MTG 3A, heat-sink MTG 6A . Max recurrent peak reverse voltage 600V. Max average rectified output 6.0A(at Tc=50degC), 3.0(at Ta=25degC). | distributor | - | 4 | -55°C | 125°C | 32 K |
| CP606 | 600 V, 6 A, single-phase silicon bridge | distributor | CP | 4 | -55°C | 125°C | 112 K |
| MA4P606-131 | 1000 V, PIN diode chip | M-A-COM---manufacturer-of-RF | - | - | -65°C | 175°C | 506 K |
| NDP6060 | N-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 360 K |
| NDP6060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 360 K |
| VTP6060 | Process photodiodes | distributor | - | 2 | -40°C | 110°C | 30 K |
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