| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQP6N50 | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 745 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP6N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 77 K |
| PHP6N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 78 K |
| PHP6N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 78 K |
| PHP6N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 78 K |
| RFP6N50 | 6.0A, 450V, 1.250 ohm, N-Channel Power MOSFET | Intersil-Corporation | - | - | - | - | 32 K |
| STP6N50 | Power dissipation 100 W Transistor polarity N Channel Current Id cont. 6 A Current Idm pulse 24 A Pitch lead 2.54 mm Voltage Vds max 500 V Resistance Rds on 1.1 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
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