| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IXGP7N60B | 600V HiPerFET power MOSFET | distributor | - | 3 | -55°C | 150°C | 70 K |
| IXGP7N60C | 600V HiPerFET power IGBT | distributor | - | 3 | -55°C | 150°C | 50 K |
| IXGP7N60CD1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 52 K |
| MI-P7NX-XXX | InputV:165V; outputV:18.5V; 100-200W; 20-..A; dual output DC-DC converter provide power system designers with cost-effective, high performance, off-the-shelf solutions | distributor | Chassis mount packag | - | - | - | 134 K |
| MTP7N20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 223 K |
| PHP7N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHP7N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 78 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| PHP7N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 91 K |
| SSP7N60B | 600V, 7A N-channel MOSFET | Fairchild-Semiconductor | - | 3 | -55°C | 150°C | 915 K |
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