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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MXD1000PD455-tap silicon delay lineMaxim-Integrated-ProducsPlastic DIP14-40°C85°C72 K
PD45128168G5-A75-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
PD45128168G5-A75A-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
PD45128441G5-A10-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
PD45128441G5-A75-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
PD45128441G5-A75A-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
PD45128441G5-A80-9JF128M-bit synchronous DRAM 4-bank, LVTTL; MOS integrated circuitdistributorTSOP54--682 K
UPD45D128442G5-C80-9LG128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAMNEC-Electronics-Inc-----250 K
UPD45D128842G5-C75-9LG128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMNEC-Electronics-Inc-----250 K
UPD45D128842G5-C80-9LG128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMNEC-Electronics-Inc-----250 K
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