Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRG4PH20K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 229 K |
IRG4PH20KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.17V @ VGE = 15V, IC = 5.0A | International-Rectifier | - | 3 | -55°C | 150°C | 276 K |
IRGPH20M | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 240 K |
IRGPH20S | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 240 K |
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