| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRGPH30MD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 86 K |
| IRGPH30S | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 82 K |
| PH3134-11S | 3100-3400 MHz, 11 W, 1 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 157 K |
| PH3134-20L | 3100-3400 MHz, 20 W, 300 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 146 K |
| PH3134-30S | 3100-3400 MHz, 30 W, 1 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 149 K |
| PH3134-55L | 3100-3400 MHz, 55 W, 300 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 153 K |
| PH3134-65M | 3100-3400 MHz, 65 W, 100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 153 K |
| PH3134-75S | 3100-3400 MHz, 75 W, 1 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 142 K |
| PH3134-9L | 3100-3400 MHz, 9 W, 300 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 138 K |
| PH3135-20M | 3100-3500 MHz, 20 W, 100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 157 K |
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