| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CPH3101 | DC/DC Converter Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 73 K |
| IRG4PH30K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 161 K |
| IRG4PH30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 212 K |
| IRG4PH30KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 3.10V @ VGE = 15V, IC = 10A | International-Rectifier | - | 3 | -55°C | 150°C | 212 K |
| PH3135-25S | 3100-3500 MHz, 25 W, 2 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 160 K |
| PH3135-30M | 3100-3500 MHz, 30 W, 100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 152 K |
| PH3135-5M | 3100-3500 MHz, 5 W, 100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 153 K |
| PH3135-5S | 3100-3500 MHz, 5 W, 2 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 158 K |
| PH3135-65M | 3100-3400 MHz, 65 W, 100 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 153 K |
| PH3135-90S | 3100-3500 MHz, 90 W, 2 ms, radar pulsed power transistor | M-A-COM---manufacturer-of-RF | - | - | - | - | 155 K |
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