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PH4

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRG4PH40KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15AInternational-Rectifier-3-55°C150°C157 K
IRG4PH40KInsulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.74V @ VGE = 15V, IC = 15AInternational-Rectifier-3-55°C150°C157 K
IRGPH40FInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C255 K
IRGPH40FD2Insulated gate bipolar transistor with ultrafast soft recovery diodeInternational-Rectifier-3-55°C150°C425 K
IRGPH40MInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C84 K
IRGPH40MD2Insulated gate bipolar transistor with ultrafast soft recovery diodeInternational-Rectifier-3-55°C150°C84 K
IRGPH40SInsulated gate bipolar transistorInternational-Rectifier-3-55°C150°C82 K
MWS11-PH41-CSWCDMA InGaP HBT Power AmplifierMicrosemi-Corporation16_PIN_MLP---129 K
MWS11-PH43-CSCDMA 2000 InGaP HBT Power AmplifierMicrosemi-Corporation16_PIN_MLP---129 K
SBPH400-3IEEE1394 PHY LAYER S100 S200 S400 MBIT/SSGS-Thomson-Microelectronics----297 K
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