| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRG4PH50K | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 92 K |
| IRG4PH50KD | Insulated gate bipolar transistor with ultrafast soft recovery diode. VCES = 1200V, VCE(on)typ. = 2.77V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 224 K |
| IRG4PH50S | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 1.47V @ VGE = 15V, IC = 33A | International-Rectifier | - | 3 | -55°C | 150°C | 130 K |
| IRG4PH50U | Insulated gate bipolar transistor. VCES = 1200V, VCE(on)typ. = 2.78V @ VGE = 15V, IC = 24A | International-Rectifier | - | 3 | -55°C | 150°C | 134 K |
| IRGPH50F | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 267 K |
| IRGPH50FD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 431 K |
| IRGPH50FD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 431 K |
| IRGPH50M | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 255 K |
| IRGPH50MD2 | Insulated gate bipolar transistor with ultrafast soft recovery diode | International-Rectifier | - | 3 | -55°C | 150°C | 1 M |
| IRGPH50S | Insulated gate bipolar transistor | International-Rectifier | - | 3 | -55°C | 150°C | 96 K |
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