Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MH16S64PHC-10 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 590 K |
MH16S64PHC-7 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 590 K |
MH16S64PHC-8 | 1,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 590 K |
MH16S72PHC-10 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
MH16S72PHC-7 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
MH16S72PHC-8 | 1,207,959,552-bit (16,777,216-word by 72-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 591 K |
MH8S64PHC-7 | 536870912-bit (8388608-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSSOP | 168 | 0°C | 70°C | 588 K |
PHC20512 | Complementary enhancement mode MOS transistors | Philips-Semiconductors | SOT96 | - | - | - | 158 K |
PHC21025 | Complementary enhancement mode MOS transistors | Philips-Semiconductors | SOT96 | - | - | - | 161 K |
PHC2300 | Complementary enhancement mode MOS transistors | Philips-Semiconductors | SOT96 | - | - | - | 157 K |
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