| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHD2N60E | 600 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 76 K |
| PHD3055L | 60 V, power MOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
| PHD3N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
| PHD3N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
| PHD50N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 111 K |
| PHD50N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 111 K |
| PHD55N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 109 K |
| PHD5N20E | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 55 K |
| PHD69N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 111 K |
| PHD6N10E | 100 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 57 K |
| PHD87N03LT | 25 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 102 K |
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