Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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PHX10N40E | 400 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
PHX10N40E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT186A | 3 | -55°C | 150°C | 75 K |
PHX14NQ20T | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 68 K |
PHX15N06E | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 57 K |
PHX18NQ20T | 200 V, N-channel trenchMOS transistor | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 293 K |
PHX1N40 | 400 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 60 K |
PHX1N40 | 400 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 60 K |
PHX1N40E | 400 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 24 K |
PHX1N60E | 600 V, power MOS transistor isolated version of PHP1N60E | Philips-Semiconductors | SOT | 3 | - | - | 24 K |
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