| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256APM-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
| 28C64APM-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| 28LV256PM-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -55°C | 125°C | 41 K |
| 28LV64PM-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -55°C | 125°C | 42 K |
| 29C010PM-3 | High speed 200 ns CMOS 1 Megabit programmable and erasable ROM 128K x 8 BIT flash PEROM | distributor | PDIP | 32 | -55°C | 125°C | 52 K |
| 29C010PM-3 | High speed CMOS. 1 Megabit programmable and erasable ROM. 128K x 8 bit flash PEROM. Access time 200 ns. | distributor | PDIP | 32 | -55°C | 125°C | 52 K |
| 29C021PM-3 | High speed 250 ns CMOS 2 Megabit programmable and erasable ROM 256K x 8 BIT flash PEROM | distributor | PDIP | 32 | -55°C | 125°C | 54 K |
| 29C021PM-3 | High speed CMOS. 2 Megabit programmable and erasable ROM. 256K x 8 bit flash PEROM. Access time 250 ns. | distributor | PDIP | 32 | -55°C | 125°C | 54 K |
| X24C00PM-3 | Serial E2PROM, organized 16 x 8, Vcc range=3 to 5.5V | distributor | PDIP | 8 | -55°C | 125°C | 40 K |
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