| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| LQ801 | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | - | 4 | -65°C | 150°C | 35 K |
| Q8010L4 | 800 V, 10 A triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8010L5 | 800 V, 10 A triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8010R4 | 800 V, 10 A triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8010R5 | 800 V, 10 A triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8015L5 | 800 V, 15 A triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| Q8015R5 | 800 V, 15 A triac | distributor | - | 3 | -40°C | 125°C | 2 M |
| TQ8015-Q | 1.25 gigabit/sec crosspoint switch | TriQuint-Semiconductor-Inc- | MQFP | 132 | - | - | 173 K |
| TQ8016-M | 1.3 gigabit/sec crosspoint switch | TriQuint-Semiconductor-Inc- | CCC | 132 | -55°C | 150°C | 233 K |
| TQ8017-Q | 1.25 gigabit/sec crosspoint switch | TriQuint-Semiconductor-Inc- | MQFP | 132 | -65°C | 150°C | 178 K |
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