| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH16D64AKQC-10 | 1073741824-bit (16777216-word by 64-bit) double date rate synchronous dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 200 | 0°C | 70°C | 329 K |
| MH8D64AKQC-10 | 536870912-bit synchronous DRAM module | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 200 | 0°C | 70°C | 340 K |
| MX23C4000QC-10 | Access time: 100; 4-Mbit mask ROM (8-bit output) | distributor | PLCC | 32 | -10°C | 70°C | 900 K |
| MX23C4000QC-12 | Access time: 120; 4-Mbit mask ROM (8-bit output) | distributor | PLCC | 32 | -10°C | 70°C | 900 K |
| MX23C4000QC-15 | Access time: 150; 4-Mbit mask ROM (8-bit output) | distributor | PLCC | 32 | -10°C | 70°C | 900 K |
| MX23C8000QC-10 | Access time: 100; 8-Mbit (1M x 8) CMOS mask ROM | distributor | PLCC | 32 | 0°C | 70°C | 905 K |
| MX23C8000QC-12 | Access time: 120; 8-Mbit (1M x 8) CMOS mask ROM | distributor | PLCC | 32 | 0°C | 70°C | 905 K |
| MX23C8000QC-15 | Access time: 150; 8-Mbit (1M x 8) CMOS mask ROM | distributor | PLCC | 32 | 0°C | 70°C | 905 K |
| MX26C1000BQC-12 | Access time: 120; 1-Mbit (128K x 8) CMOS multiple-time-programmable-EPROM | distributor | PLCC | 32 | 0°C | 70°C | 985 K |
| MX26C1000BQC-15 | Access time: 150; 1-Mbit (128K x 8) CMOS multiple-time-programmable-EPROM | distributor | PLCC | 32 | 0°C | 70°C | 985 K |
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