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R1A

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
APT1001R1AVR1000v, 9A power MOS VAdvanced-Power-Technology-APTTO3-55°C150°C68 K
BCR1AM-121A semiconductor for low power use, glass passivation typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C125°C106 K
BCR1AM-81A semiconductor for low power use, planar passivation typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C125°C104 K
BRR1A16EQuad differential receiverdistributorPlastic SOJ16-40°C125°C236 K
BRR1A16NBQuad differential receiverdistributorPlastic SOIC/NB16-40°C125°C236 K
BRR1A16PQuad differential receiverdistributorPlastic DIP16-40°C125°C236 K
FR1A-T11.0A fast recovery surface mount rectifierdistributorSMB2-50°C150°C50 K
FR1A-T11.0A fast recovery surface mount rectifierdistributorSMB2-50°C150°C50 K
FR1A-T31.0A fast recovery surface mount rectifierdistributorSMB2-50°C150°C50 K
FR1A-T31.0A fast recovery surface mount rectifierdistributorSMB2-50°C150°C50 K
SML1001R1AN1000V Vdss N-Channel FET (field effect transistor)Semelab-Plc-TO3---60 K
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