| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| MR27V3266D | 2M x 16 / 1M x 32 synchronous OTR ROM | distributor | TSOP | 86 | 0°C | 70°C | 234 K |
| MR27V801DMA | 1,048,576-word x 8-bit one time PROM | distributor | SOP | 32 | 0°C | 70°C | 50 K |
| MR27V801DTA | 1,048,576-word x 8-bit one time PROM | distributor | TSOP | 32 | 0°C | 70°C | 50 K |
| MR27V802DMA | 524,288-word x 16-bit or 1,048,576-word x 8 bit one time PROM | distributor | SOP | 44 | 0°C | 70°C | 58 K |
| MR27V802DRA | 524,288-word x 16-bit or 1,048,576-word x 8-bit one time PROM | distributor | DIP | 42 | 0°C | 70°C | 58 K |
| MR27V802DTP | 524,288-word x 16-bit or 1,048,576-word x 8 bit one time PROM | distributor | TSOP | 44 | 0°C | 70°C | 58 K |
| MR27V852DMA | 524,288-word x 16-bit or 1,048,576-word x 8 bit | distributor | SOP | 44 | 0°C | 70°C | 56 K |
| MR27V852DRA | 524,288-word x 16-bit or 1,048,576-word x 8 bit | distributor | DIP | 42 | 0°C | 70°C | 56 K |
| MR27V852DTP | 524,288-word x 16-bit or 1,048,576-word x 8 bit | distributor | TSOP | 44 | 0°C | 70°C | 56 K |
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