| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| R6110225XXYZ | 200V, 250A general purpose single diode | distributor | - | - | - | - | 686 K |
| R6110225XXYZ | 200V, 250A general purpose single diode | distributor | - | - | - | - | 686 K |
| R6110230XXYZ | 200V, 300A general purpose single diode | distributor | - | - | - | - | 686 K |
| R6110425XXYZ | 400V, 250A general purpose single diode | distributor | - | - | - | - | 686 K |
| R6110430XXYZ | 400V, 300A general purpose single diode | distributor | - | - | - | - | 686 K |
| UNR611D | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
| UNR611E | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
| UNR611F | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
| UNR611H | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
| UNR611L | Silicon PNP epitaxial planer transistor with biult-in resistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 181 K |
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